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1N4007G | TAIWAN SEMICONDUCTOR

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TAIWAN SEMICONDUCTOR 1N4007G

Rectifier Diode, 1 Element, 1A,1000VV(RRM),Silicon, DO-41


RoHS Compliant

Ordering Info

In Stock: 5000

MOQ: 1

Lead Time: 12 weeks

Package Quantity: 1

Quantity Cost
1+ $0.02


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Electrical Characteristics

Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1
JEDEC-95 Code DO-41
JESD-30 Code O-PALF-W2
JESD-609 Code e3
Non-rep Pk Forward Current-Max 30
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175
Operating Temperature-Min -65
Output Current-Max 1
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 1000
Sub Category Rectifier Diodes
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form WIRE
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) 40