Dual N-Channel MOSFET, 320 mA, 60 V, 6-Pin SOT-363 Nexperia BSS138PS,115

RS Stock No.: 792-0901PBrand: NexperiaManufacturers Part No.: BSS138PS,115
brand-logo
View all in MOSFETs

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

320 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

320 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

0.72 nC @ 4.5 V

Width

1.35mm

Minimum Operating Temperature

-55 °C

Height

1mm

Product details

Dual N-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

€ 0.222

Each (Supplied on a Reel) (Exc. Vat)

Dual N-Channel MOSFET, 320 mA, 60 V, 6-Pin SOT-363 Nexperia BSS138PS,115
Select packaging type

€ 0.222

Each (Supplied on a Reel) (Exc. Vat)

Dual N-Channel MOSFET, 320 mA, 60 V, 6-Pin SOT-363 Nexperia BSS138PS,115
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

QuantityUnit pricePer Reel
40 - 360€ 0.222€ 8.87
400 - 760€ 0.089€ 3.55
800+€ 0.085€ 3.41

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

320 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

320 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

0.72 nC @ 4.5 V

Width

1.35mm

Minimum Operating Temperature

-55 °C

Height

1mm

Product details

Dual N-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more