onsemi FGH60N60SMD IGBT, 120 A 600 V, 3-Pin TO-247AB, Through Hole
- RS Stock No.:
- 739-4945
- Mfr. Part No.:
- FGH60N60SMD
- Brand:
- onsemi
34 In stock - FREE next working day delivery available
1 available from Europe for delivery within 1 working day(s).
Added
Price Each
£5.09
(exc. VAT)
£6.11
(inc. VAT)
| Units | Per unit |
| 1 - 4 | £5.09 |
| 5 - 9 | £4.94 |
| 10 - 14 | £4.83 |
| 15 - 19 | £4.67 |
| 20 + | £4.58 |
- RS Stock No.:
- 739-4945
- Mfr. Part No.:
- FGH60N60SMD
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 120 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 600 W |
| Package Type | TO-247AB |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.6 x 4.7 x 20.6mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |