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Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3

Manufacturer part number: IXFH12N100P

TME Symbol: IXFH12N100P

Specification

Manufacturer
IXYS
Type of transistor
N-MOSFET
Technology
HiPerFET™, Polar™
Polarisation
unipolar
Drain-source voltage
1kV
Drain current
12A
Power dissipation
463W
Case
TO247-3
Gate-source voltage
±30V
On-state resistance
1.05Ω
Mounting
THT
Gate charge
80nC
Kind of package
tube
Kind of channel
enhanced
Reverse recovery time
300ns
Gross weight6.15 g
Prepack informationTube = 30 pcs
Certificates
See other products in this category: THT N channel transistors IXYS
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No. of pieces (Multiplicity: 1)
Hardly available product
Way and cost of delivery
Payments

IXFH12N100PIXYS

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