N-Channel MOSFET, 3.6 A, 60 V, 3-Pin SOT-89 Diodes Inc ZXMN6A11ZTA

RS Stock No.: 708-2450Brand: DiodesZetexManufacturers Part No.: ZXMN6A11ZTA
brand-logo
View all in MOSFETs

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-89

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Width

2.6mm

Transistor Material

Si

Length

4.6mm

Typical Gate Charge @ Vgs

5.7 nC @ 10 V

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1.6mm

Product details

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

€ 0.865

Each (In a Pack of 10) (Exc. Vat)

N-Channel MOSFET, 3.6 A, 60 V, 3-Pin SOT-89 Diodes Inc ZXMN6A11ZTA
Select packaging type

€ 0.865

Each (In a Pack of 10) (Exc. Vat)

N-Channel MOSFET, 3.6 A, 60 V, 3-Pin SOT-89 Diodes Inc ZXMN6A11ZTA
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

QuantityUnit pricePer Pack
10 - 40€ 0.865€ 8.65
50 - 240€ 0.772€ 7.72
250 - 490€ 0.755€ 7.55
500+€ 0.735€ 7.35

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-89

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Width

2.6mm

Transistor Material

Si

Length

4.6mm

Typical Gate Charge @ Vgs

5.7 nC @ 10 V

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1.6mm

Product details

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.