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Transistor: N-MOSFET; unipolar; 60V; 37.1A; Idm: 210A; 121W; TO220-3

Manufacturer part number: FQP50N06L

TME Symbol: FQP50N06L

Specification

Manufacturer
ONSEMI
Type of transistor
N-MOSFET
Technology
QFET®
Polarisation
unipolar
Drain-source voltage
60V
Drain current
37.1A
Pulsed drain current
210A
Power dissipation
121W
Case
TO220-3
Gate-source voltage
±20V
On-state resistance
21mΩ
Mounting
THT
Gate charge
24.5nC
Kind of package
tube
Kind of channel
enhanced
Gross weight2.04 g
Prepack informationReel = 50 pcs
Certificates
See other products in this category: THT N channel transistors ONSEMI
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FQP50N06LONSEMI

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