Manufacturer | Infineon (IRF) | |
Type of transistor | N-MOSFET | |
Technology | HEXFET® | |
Polarisation | unipolar | |
Drain-source voltage | 100V | |
Drain current | 33A | |
Power dissipation | 3.8W | |
Case | D2PAK | |
Gate-source voltage | ±20V | |
Mounting | SMD | |
Kind of package | reel | |
Kind of channel | enhanced |
Under this option, you can: