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| 产品描述：
Dual N & P-Channel 60 V 0.3 Ohm Enhancement Mode MOSFET H-Bridge -SM-8
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| Rds On (Max) @ Id, Vgs | 300 mOhm @ 1.8A, 10V |
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| Package / Case | SOT-223-8 |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A, 1.3A |
| Part Status | Active |
| Manufacturer | Diodes Incorporated |
| Family | Transistors - FETs, MOSFETs - Arrays |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 166pF @ 40V |
| ECCN | EAR99 |
| FET Feature | Logic Level Gate |
| Power - Max | 1.3W |
| Supplier Device Package | SM8 |
| Gate Charge (Qg) @ Vgs | 3.2nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | 2 N and 2 P-Channel (H-Bridge) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Cut Tape (CT) |
| 数据手册： |
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