You are browsing international version of the website. Based on location data, the suggested version of the page for you is USA / US
Cart
Your account

Due to the public holiday in Poland (29.03 — 01.04.2024) we inform about changes in the supply of goods.

Here you will find out more

Transistor: P-MOSFET x2; unipolar; -30V; -5.9A; 5W; SO8

Manufacturer part number: SI4925DDY-T1-GE3

TME Symbol: SI4925DDY-T1-GE3

Specification

Manufacturer
VISHAY
Type of transistor
P-MOSFET x2
Polarisation
unipolar
Drain-source voltage
-30V
Drain current
-5.9A
Power dissipation
5W
Case
SO8
Gate-source voltage
±20V
On-state resistance
41mΩ
Mounting
SMD
Gate charge
50nC
Kind of package
reel, tape
Kind of channel
enhanced
Gross weight0.162 g
Prepack informationReel = 2500 pcs
Certificates
See other products in this category: Multi channel transistors VISHAY
*
No. of pieces (Multiplicity: 1)
Ask for price for larger quantity
Hardly available product
Way and cost of delivery
Payments

SI4925DDY-T1-GE3VISHAY

The documentation is not updated automatically, but we make every effort to provide the latest versions of the documents.

Your web browser is no longer supported, download a new version

Chrome Chrome Download
Firefox Firefox Download
Microsoft Edge Microsoft Edge Download
Safari Safari Download