Qg - Gate Charge: | 89 nC |
---|---|
Packaging: | Reel |
Pd - Power Dissipation: | 156 W |
Tradename: | OptiMOS |
Vgs th - Gate-Source Threshold Voltage: | 2.8 V |
Vgs - Gate-Source Voltage: | 20 V |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 23 ns |
Manufacturer: | Infineon |
Transistor Polarity: | N-Channel |
Brand: | Infineon Technologies |
Typical Turn-Off Delay Time: | 43 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Transistor Type: | 1 N-Channel |
ECCN | EAR99 |
Rds On - Drain-Source Resistance: | 1.45 mOhms |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Package / Case: | TDSON-8 |
Configuration: | Single Quad Drain |
Mounting Style: | SMD/SMT |
Fall Time: | 11 ns |
Forward Transconductance - Min: | 150 S |
Series: | OptiMOS |
Factory Pack Quantity: | 5000 |
Part # Aliases: | BSC014N06NS BSC014N06NSXT SP000924886 |
RoHS: | Details |
Id - Continuous Drain Current: | 100 A |
Rise Time: | 10 ns |
Maximum Operating Temperature: | + 150 C |
数据手册: |
---|