Request Quote













Request Quote


IRF640NSTRLPBF | INFINEON

Download the free Library Loader to convert this file for your ECAD Tool.

Learn more about ECAD Model here.

INFINEON IRF640NSTRLPBF

Single N-Channel 200V 0.15 Ohm 67 nC HEXFET® Power Mosfet - D2PAK


RoHS Compliant

Ordering Info

In Stock: 3200 Delivery

MOQ: 800

Package Quantity: 800

ECCN: N.E.

COO: CN

Subject to tariff fees.

Quantity Cost
800-3199 $0.7328
3200+ $0.6819


Secure Payment Methods: Accepted Payment Methods:  Visa, Mastercard, American Express, Discovery Card PayPal accepted
Need more Info?

Electrical Characteristics

Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 247
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200
Drain Current-Max (Abs) (ID) 18
Drain Current-Max (ID) 18
Drain-source On Resistance-Max 0.15
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150
Pulsed Drain Current-Max (IDM) 72
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON