Manufacturer | INFINEON TECHNOLOGIES | |
Type of transistor | N-MOSFET | |
Technology | HEXFET® | |
Polarisation | unipolar | |
Drain-source voltage | 200V | |
Drain current | 18A | |
Power dissipation | 150W | |
Case | TO262 | |
Gate-source voltage | ±20V | |
On-state resistance | 0.15Ω | |
Mounting | THT | |
Gate charge | 44.7nC | |
Kind of channel | enhanced |
Under this option, you can: