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Due to the public holiday in Poland (29.03 — 01.04.2024) we inform about changes in the supply of goods.

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Transistor: N-MOSFET; Polar™; unipolar; 1kV; 26A; 780W; TO264; 300ns

Manufacturer part number: IXFK26N100P

TME Symbol: IXFK26N100P

Specification

Manufacturer
IXYS
Type of transistor
N-MOSFET
Technology
HiPerFET™, Polar™
Polarisation
unipolar
Drain-source voltage
1kV
Drain current
26A
Power dissipation
780W
Case
TO264
Gate-source voltage
±30V
On-state resistance
390mΩ
Mounting
THT
Gate charge
197nC
Kind of package
tube
Kind of channel
enhanced
Reverse recovery time
300ns
Gross weight49.9 g
Prepack informationTube = 25 pcs
Certificates
See other products in this category: THT N channel transistors IXYS
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IXFK26N100PIXYS

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