N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK Infineon IPD25CN10NGATMA1

RS Stock No.: 170-2266Brand: InfineonManufacturers Part No.: IPD25CN10NGATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

26 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

71 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

7.47mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

23 nC @ 10 V

Maximum Operating Temperature

+175 °C

Length

6.73mm

Height

2.41mm

Series

IPD25CN10N G

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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€ 0.523

Each (On a Reel of 2500) (Exc. Vat)

N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK Infineon IPD25CN10NGATMA1

€ 0.523

Each (On a Reel of 2500) (Exc. Vat)

N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK Infineon IPD25CN10NGATMA1
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

26 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

71 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

7.47mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

23 nC @ 10 V

Maximum Operating Temperature

+175 °C

Length

6.73mm

Height

2.41mm

Series

IPD25CN10N G

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V