Manufacturer | NEXPERIA | |
Type of transistor | N-MOSFET x2 | |
Technology | Trench | |
Polarisation | unipolar | |
Drain-source voltage | 60V | |
Drain current | 0.215A | |
Pulsed drain current | 1.2A | |
Power dissipation | 445mW | |
Case | SC88, SOT363, TSSOP6 | |
Gate-source voltage | ±20V | |
On-state resistance | 2Ω | |
Mounting | SMD | |
Gate charge | 0.6nC | |
Kind of package | reel, tape | |
Kind of channel | enhanced | |
Features of semiconductor devices | ESD protected gate |
Under this option, you can: