Manufacturer | INFINEON TECHNOLOGIES | |
Type of transistor | N-MOSFET | |
Technology | HEXFET® | |
Polarisation | unipolar | |
Drain-source voltage | 100V | |
Drain current | 130A | |
Power dissipation | 370W | |
Case | TO220AB | |
Gate-source voltage | ±20V | |
On-state resistance | 4.5mΩ | |
Mounting | THT | |
Gate charge | 150nC | |
Kind of package | tube | |
Kind of channel | enhanced |
Under this option, you can: