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Transistor: N-MOSFET; unipolar; 100V; 130A; 370W; TO220AB

Manufacturer part number: IRFB4110PBF

TME Symbol: IRFB4110PBF

Specification

Manufacturer
INFINEON TECHNOLOGIES
Type of transistor
N-MOSFET
Technology
HEXFET®
Polarisation
unipolar
Drain-source voltage
100V
Drain current
130A
Power dissipation
370W
Case
TO220AB
Gate-source voltage
±20V
On-state resistance
4.5mΩ
Mounting
THT
Gate charge
150nC
Kind of package
tube
Kind of channel
enhanced
Gross weight1.968 g
Prepack informationTube = 50 pcs
Certificates
See other products in this category: THT N channel transistors INFINEON TECHNOLOGIES
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