Manufacturer | IXYS | |
Type of module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 170V | |
Drain current | 260A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 5.2mΩ | |
Pulsed drain current | 800A | |
Power dissipation | 1.07kW | |
Technology | GigaMOS™, HiPerFET™, TrenchT2™ | |
Kind of channel | enhanced | |
Gate charge | 640nC | |
Reverse recovery time | 150ns | |
Gate-source voltage | ±30V | |
Mechanical mounting | screw |
Under this option, you can: