| 2N3055G | ||
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| 产品描述：
2N Series NPN 115 W 60 V 15 A Flange Mount Power Transistor - TO-3
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| 标准包装：1 | ||
| 数据手册： | ||
| ECAD模型:
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| Width: | 26.67 mm (Max) |
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| Emitter- Base Voltage VEBO: | 7 V |
| Collector- Base Voltage VCBO: | 100 V |
| DC Collector/Base Gain hfe Min: | 20 |
| Series: | 2N3055 |
| Minimum Operating Temperature: | - 65 C |
| Factory Pack Quantity: | 100 |
| RoHS: | Details |
| Product Category: | Bipolar Transistors - BJT |
| Gain Bandwidth Product fT: | 2.5 MHz |
| Configuration: | Single |
| Maximum Operating Temperature: | + 150 C |
| Maximum DC Collector Current: | 15 A |
| Packaging: | Tray |
| Length: | 39.37 mm |
| Manufacturer: | ON Semiconductor |
| Pd - Power Dissipation: | 115000 mW |
| Transistor Polarity: | NPN |
| Brand: | ON Semiconductor |
| Package / Case: | TO-204-2 (TO-3) |
| Collector- Emitter Voltage VCEO Max: | 60 V |
| Height: | 8.51 mm (Max) |
| Mounting Style: | Through Hole |
| ECCN | EAR99 |
| 数据手册： |
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