You are browsing international version of the website. Based on location data, the suggested version of the page for you is USA / US
Cart
Your account

Transistor: N-MOSFET; Trench; unipolar; 60V; 0.19A; 350mW

Manufacturer part number: 2N7002CK.215

TME Symbol: 2N7002CK.215

Specification

Manufacturer
NEXPERIA
Type of transistor
N-MOSFET
Technology
Trench
Polarisation
unipolar
Drain-source voltage
60V
Drain current
0.19A
Power dissipation
0.35W
Case
SOT23, TO236AB
Gate-source voltage
±20V
On-state resistance
4.4Ω
Mounting
SMD
Gate charge
1.3nC
Kind of package
reel, tape
Kind of channel
enhanced
Features of semiconductor devices
ESD protected gate
Gross weight0.012 g
Prepack informationReel = 3000 pcs
Certificates

WATCH VIDEO

See other products in this category: SMD N channel transistors NEXPERIA
*
Product withdrawn from the offer
Use the specification table below to search for similar products

2N7002CK.215NEXPERIA

The documentation is not updated automatically, but we make every effort to provide the latest versions of the documents.

Your web browser is no longer supported, download a new version

Chrome Chrome Download
Firefox Firefox Download
Microsoft Edge Microsoft Edge Download
Safari Safari Download