- RS Stock No.:
- 761-3571
- Mfr. Part No.:
- 2N7002DW
- Brand:
- onsemi
- RS Stock No.:
- 761-3571
- Mfr. Part No.:
- 2N7002DW
- Brand:
- onsemi
Legislation and Compliance
Product Details
Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
The 2N7002DW is a Dual N-channel general purpose MOSFET. It features low-on resistance and low gate threshold voltage. It also features fast switching speed and is available in an ultra-small surface mount package. This Dual N-channel MOSFET is typically used in all general purpose applications, but it is commonly used in motor controls and PMFs (Power Management Functions).
Features and benefits:
• Dual N-Channel
• Low on resistance
• Low gate threshold
• Fast switching speed
• Low input & output leak
• Low on resistance
• Low gate threshold
• Fast switching speed
• Low input & output leak
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 115 mA |
Maximum Drain Source Voltage | 60 V |
Package Type | SOT-363 |
Mounting Type | Surface Mount |
Pin Count | 6 |
Maximum Drain Source Resistance | 13.5 Ω |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 200 mW |
Transistor Configuration | Isolated |
Maximum Gate Source Voltage | -20 V, +20 V |
Transistor Material | Si |
Width | 1.25mm |
Length | 2mm |
Maximum Operating Temperature | +150 °C |
Number of Elements per Chip | 2 |
Height | 1mm |
Minimum Operating Temperature | -55 °C |