- RS Stock No.:
- 354-5708P
- Mfr. Part No.:
- BSP135H6327XTSA1
- Brand:
- Infineon
- RS Stock No.:
- 354-5708P
- Mfr. Part No.:
- BSP135H6327XTSA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 120 mA |
Maximum Drain Source Voltage | 600 V |
Package Type | SOT-223 |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 60 Ω |
Channel Mode | Depletion |
Maximum Gate Threshold Voltage | 1V |
Minimum Gate Threshold Voltage | 2.1V |
Maximum Power Dissipation | 1.8 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Transistor Material | Si |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Length | 6.5mm |
Width | 3.5mm |
Typical Gate Charge @ Vgs | 3.7 nC @ 5 V |
Series | SIPMOS |
Minimum Operating Temperature | -55 °C |
Height | 1.6mm |