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Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A

Manufacturer part number: IXFN26N120P

TME Symbol: IXFN26N120P

Specification

Manufacturer
IXYS
Type of module
MOSFET transistor
Semiconductor structure
single transistor
Drain-source voltage
1.2kV
Drain current
23A
Case
SOT227B
Electrical mounting
screw
Polarisation
unipolar
On-state resistance
0.5Ω
Pulsed drain current
60A
Power dissipation
695W
Technology
HiPerFET™, Polar™
Kind of channel
enhanced
Gate charge
255nC
Reverse recovery time
300ns
Gate-source voltage
±40V
Mechanical mounting
screw
Gross weight37.12 g
Prepack informationTube = 10 pcs
Certificates
See other products in this category: Transistor modules MOSFET IXYS
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IXFN26N120PIXYS

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