Manufacturer | IXYS | |
Type of module | MOSFET transistor | |
Semiconductor structure | single transistor | |
Drain-source voltage | 1.2kV | |
Drain current | 23A | |
Case | SOT227B | |
Electrical mounting | screw | |
Polarisation | unipolar | |
On-state resistance | 0.5Ω | |
Pulsed drain current | 60A | |
Power dissipation | 695W | |
Technology | HiPerFET™, Polar™ | |
Kind of channel | enhanced | |
Gate charge | 255nC | |
Reverse recovery time | 300ns | |
Gate-source voltage | ±40V | |
Mechanical mounting | screw |
Under this option, you can: