Manufacturer | INFINEON TECHNOLOGIES | |
Type of transistor | P-MOSFET | |
Technology | HEXFET® | |
Polarisation | unipolar | |
Drain-source voltage | -150V | |
Drain current | -27A | |
Power dissipation | 250W | |
Case | TO220AB | |
Gate-source voltage | ±20V | |
On-state resistance | 0.15Ω | |
Mounting | THT | |
Gate charge | 21nC | |
Kind of package | tube | |
Kind of channel | enhanced |
Under this option, you can: