MMBT3904LT1G ON Semiconductor

ON Semiconductor MMBT3904LT1G

NPN Surface Mount

MMBT3904LT1G

Manufacturer No:

MMBT3904LT1G

Manufacturer:

ON Semiconductor

Utmel No:

1807-MMBT3904LT1G

Package:

TO-236-3, SC-59, SOT-23-3

ECAD Model:

Description:

NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

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In Stock : 142193

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MMBT3904LT1G information

Specifications
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Product Details
Product comparison
ON Semiconductor MMBT3904LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT3904LT1G.
  • Type
    Parameter
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    10 Weeks
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Type
    General Purpose
  • Voltage - Rated DC
    40V
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    300mW
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating

    Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.

    200mA
  • Frequency
    300MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MMBT3904
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • Number of Elements
    1
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    225mW
  • Gain Bandwidth Product

    The gain–bandwidth product (designated as GBWP, GBW, GBP, or GB) for an amplifier is the product of the amplifier's bandwidth and the gain at which the bandwidth is measured.

    300MHz
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    40V
  • Max Collector Current
    200mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 10mA 1V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 5mA, 50mA
  • Collector Emitter Breakdown Voltage

    Collector-emitter breakdown voltage is the VC at which a specified IC flows, with the base open. Since it's the reverse current across a junction, IC exhibits a knee shaped rise, increasing rapidly once breakdown occurs.

    40V
  • Transition Frequency
    300MHz
  • Collector Emitter Saturation Voltage

    The voltage between the collector and emitter terminals under conditions of base current or base-emitter voltage beyond which the collector current remains essentially constant as the base current or voltage is increased.

    200mV
  • Max Breakdown Voltage
    40V
  • Collector Base Voltage (VCBO)
    60V
  • Emitter Base Voltage (VEBO)
    6V
  • hFE Min
    100
  • Max Junction Temperature (Tj)
    150°C
  • Turn Off Time-Max (toff)
    250ns
  • Turn On Time-Max (ton)
    70ns
  • Height
    1.11mm
  • Length
    2.9mm
  • Width
    1.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Lead Free
    Lead Free
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Download datasheets and manufacturer documentation for ON Semiconductor MMBT3904LT1G.
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