ON Semiconductor MMBT2222ALT1G
NPN Surface Mount 10nA ICBO
Manufacturer No:
MMBT2222ALT1G
Tiny WHSLManufacturer:
Utmel No:
1807-MMBT2222ALT1G
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
Description:
NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
Quantity:
Unit Price: $0.149825
Ext Price: $0.15
Delivery:
Payment:
In Stock : 87000
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.149825
$0.15
10
$0.141345
$1.41
100
$0.133344
$13.33
500
$0.125796
$62.90
1000
$0.118676
$118.68
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- TypeParameter
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time10 Weeks
- Contact Plating
Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.
Tin - Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface Mount
having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.
YES - Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature
The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.
-55°C~150°C TJ - Packaging
Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.
Tape & Reel (TR) - SeriesAutomotive, AEC-Q101
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part Status
Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.
Active - Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- TypeGeneral Purpose
- Voltage - Rated DC40V
- Max Power Dissipation
The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.
300mW - Terminal PositionDUAL
- Terminal Form
Occurring at or forming the end of a series, succession, or the like; closing; concluding.
GULL WING - Peak Reflow Temperature (Cel)260
- Current Rating
Current rating is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element.
600mA - Frequency300MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBT2222A
- Pin Count
a count of all of the component leads (or pins)
3 - Number of Elements1
- Element Configuration
The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.
Single - Power Dissipation
the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.
225mW - Transistor ApplicationSWITCHING
- Gain Bandwidth Product
The gain–bandwidth product (designated as GBWP, GBW, GBP, or GB) for an amplifier is the product of the amplifier's bandwidth and the gain at which the bandwidth is measured.
300MHz - Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage
Collector-emitter breakdown voltage is the VC at which a specified IC flows, with the base open. Since it's the reverse current across a junction, IC exhibits a knee shaped rise, increasing rapidly once breakdown occurs.
40V - Transition Frequency300MHz
- Collector Emitter Saturation Voltage
The voltage between the collector and emitter terminals under conditions of base current or base-emitter voltage beyond which the collector current remains essentially constant as the base current or voltage is increased.
300mV - Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)6V
- hFE Min100
- Max Junction Temperature (Tj)150°C
- Turn Off Time-Max (toff)285ns
- Height1.11mm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation Hardening
Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.
No - RoHS Status
RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.
ROHS3 Compliant - Lead FreeLead Free