MJD50T4G
32062 in stock
onsemi
1.0 A, 400 V High Voltage NPN Bipolar Power Transistor
| 1 pcs | 10 pcs | 100 pcs |
|---|---|---|
| $0.30 | $0.28 | $0.25 |
| 1000 pcs | 10000 pcs | |
| $0.24 | $0.23 |
- Voltage - Collector Emitter Breakdown (Max)
- 400V
- Vce Saturation (Max) @ Ib, Ic
- 1V @ 200mA, 1A
- Transistor Type
- NPN
- Supplier Device Package
- DPAK
- Series
- -
- Power - Max
- 1.56W
- Packaging
- Cut Tape (CT)
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Other Names
- MJD50T4GOS
MJD50T4GOS-ND
MJD50T4GOSCT
- Operating Temperature
- -65°C ~ 150°C (TJ)
- Mounting Type
- Surface Mount
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Manufacturer Standard Lead Time
- 16 Weeks
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Frequency - Transition
- 10MHz
- Detailed Description
- Bipolar (BJT) Transistor NPN 400V 1A 10MHz 1.56W Surface Mount DPAK
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 30 @ 300mA, 10V
- Current - Collector Cutoff (Max)
- 200µA
- Current - Collector (Ic) (Max)
- 1A
- Base Part Number
- MJD50