Allicdata Part #: | BSC026N08NS5ATMA1TR-ND |
Manufacturer Part#: |
BSC026N08NS5ATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 80V 23A 8TDSON |
More Detail: | N-Channel 80V 23A (Ta), 100A (Tc) 2.5W (Ta), 156W ... |
DataSheet: | BSC026N08NS5ATMA1 Datasheet/PDF |
Quantity: | 1000 |
Series: | OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 2.6 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 3.8V @ 115µA |
Gate Charge (Qg) (Max) @ Vgs: | 92nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 6800pF @ 40V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 156W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TDSON-8 |
Package / Case: | 8-PowerTDFN |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Transistors, in general, are electronic components used in many applications where an electronic signal needs to be switched between two states. A Field-Effect Transistor (FET) is one of the most common transistors used, which is a three-terminal device whose electrical characteristics relies on a small electric field. Metal–Oxide–Semiconductor Field-effect transistor (MOSFET) is a specific type of FET, which has a metal gate electrode sitting on the insulation of a semiconductor material. An example of a MOSFET is the BSC026N08NS5ATMA1.
The BSC026N08NS5ATMA1 is typically applied in power supplies, lighting control and home appliances. It can control signals from low to high voltage and from low to high current. It can also be used for power switching applications, such as high voltage power MOSFETs for Uninterruptable Power Supply (UPSs) and for dedicated power electronics.
The working principle of the BSC026N08NS5ATMA1 is based on its construction: the MOSFET has three terminals, which are called gate, drain and source. The gate terminal connects to a control current, which will apply a voltage to the gate input. This voltage causes an electric field to form in the channel between the source and drain, which will affect the current flow from the source to the drain, thereby controlling the flow of the current. When the gate voltage has a positive voltage, the current flows from source to drain, and when the gate voltage has a negative voltage, the current stops flowing.
The BSC026N08NS5ATMA1 is an innovative and efficient MOSFET which can be used in many applications as good replacement for bipolar transistors. Its ability to control current and voltage are superior compared to other types of transistors, while its low on-resistance, due to its higher voltage capabilities and fast switching speeds, makes it one of the most reliable transistors on the market. Furthermore, this transistor is designed to have superior thermal characteristics, which makes it suitable for many high-power applications.
The BSC026N08NS5ATMA1 is a versatile and efficient MOSFET which allows its users to control current and voltage with a high degree of precision. Its low on-resistance and superior thermal characteristics make it suitable for various high-power applications, while its fast switching speeds and wide range of voltages make it an ideal choice for many power supplies, lighting control and home appliance designs.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BSC027N06LS5ATMA1 | Infineon Tec... | 0.71 $ | 1000 | MOSFET N-CH 60V 100A 8TDS... |
BSC028N06NSTATMA1 | Infineon Tec... | 0.71 $ | 1000 | DIFFERENTIATED MOSFETSN-C... |
BSC019N06NSATMA1 | Infineon Tec... | 0.75 $ | 1000 | DIFFERENTIATED MOSFETSN-C... |
BSC011N03LSTATMA1 | Infineon Tec... | 0.78 $ | 1000 | DIFFERENTIATED MOSFETSN-C... |
BSC010N04LSTATMA1 | Infineon Tec... | -- | 5000 | DIFFERENTIATED MOSFETSN-C... |
BSC016N06NSTATMA1 | Infineon Tec... | 1.08 $ | 1000 | DIFFERENTIATED MOSFETSN-C... |
BSC014N06NSTATMA1 | Infineon Tec... | 1.23 $ | 1000 | DIFFERENTIATED MOSFETSN-C... |
BSC0904NSIATMA1 | Infineon Tec... | 0.22 $ | 1000 | MOSFET N-CH 30V 20A 8TDSO... |
BSC016N03LSGATMA1 | Infineon Tec... | 0.49 $ | 1000 | MOSFET N-CH 30V 100A TDSO... |
BSC022N03SG | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 100A TDSO... |
BSC032N03SG | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 100A TDSO... |
BSC042N03ST | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 50A TDSON... |
BSC059N03ST | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 50A TDSON... |
BSC022N03S | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 50A TDSON... |
BSC024N025S G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 100A TDSO... |
BSC027N03S G | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 100A TDSO... |
BSC032N03S | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 50A TDSON... |
BSC037N025S G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 100A TDSO... |
BSC052N03S G | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 80A TDSON... |
BSC072N025S G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 40A TDSON... |
BSC085N025S G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 35A TDSON... |
BSC094N03S G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 35A TDSON... |
BSC0908NSATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 34V 49A 8TDSO... |
BSC042N03S G | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 95A TDSON... |
BSC080N03LSGATMA1 | Infineon Tec... | 0.2 $ | 1000 | MOSFET N-CH 30V 53A TDSON... |
BSC050N03LSGATMA1 | Infineon Tec... | 0.22 $ | 1000 | MOSFET N-CH 30V 80A TDSON... |
BSC060P03NS3EGATMA1 | Infineon Tec... | 0.35 $ | 1000 | MOSFET P-CH 30V 17.7A TDS... |
BSC066N06NSATMA1 | Infineon Tec... | 0.37 $ | 1000 | MOSFET N-CH 60V 64A 8TDSO... |
BSC026NE2LS5ATMA1 | Infineon Tec... | 0.37 $ | 1000 | MOSFET N-CH 25V 24A 8TDSO... |
BSC098N10NS5ATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 60A 8TDS... |
BSC014N03LSGATMA1 | Infineon Tec... | 0.5 $ | 1000 | MOSFET N-CH 30V 100A TDSO... |
BSC072N08NS5ATMA1 | Infineon Tec... | 0.51 $ | 1000 | MOSFET N-CH 80V 74A 8TDSO... |
BSC030N08NS5ATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 80V 100A 8TDS... |
BSC017N04NSGATMA1 | Infineon Tec... | 0.74 $ | 1000 | MOSFET N-CH 40V 100A TDSO... |
BSC097N06NSTATMA1 | Infineon Tec... | 0.3 $ | 1000 | DIFFERENTIATED MOSFETSN-C... |
BSC0909NSATMA1 | Infineon Tec... | 0.16 $ | 1000 | MOSFET N-CH 34V 44A 8TDSO... |
BSC090N03LSGATMA1 | Infineon Tec... | 0.2 $ | 1000 | MOSFET N-CH 30V 48A TDSON... |
BSC080N03MSGATMA1 | Infineon Tec... | 0.2 $ | 1000 | MOSFET N-CH 30V 53A TDSON... |
BSC057N03MSGATMA1 | Infineon Tec... | 0.22 $ | 1000 | MOSFET N-CH 30V 71A TDSON... |
BSC057N03LSGATMA1 | Infineon Tec... | 0.25 $ | 1000 | MOSFET N-CH 30V 71A TDSON... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...