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- Manufacturer No：BSC026N08NS5ATMA1
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：BSC026N08NS5ATMA1
- SKU：2659181
- Description：MOSFET N-CH 80V 23A 8TDSON
User Guide
User Guide
BSC026N08NS5ATMA1 Details
MOSFET N-CH 80V 23A 8TDSON
BSC026N08NS5ATMA1 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Terminal Position: DUAL
- Lead Free: Contains Lead
- Threshold Voltage: 3V
- Reach Compliance Code: not_compliant
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Terminal Form: FLAT
- Technology: MOSFET (Metal Oxide)
- Height: 1.1mm
- Operating Mode: ENHANCEMENT MODE
- Drain to Source Breakdown Voltage: 80V
- Vgs (Max): ±20V
- Drain Current-Max (Abs) (ID): 23A
- Pulsed Drain Current-Max (IDM): 400A
- Rise Time: 14 ns
- Fall Time (Typ): 16 ns
- Package / Case: 8-PowerTDFN
- Weight: 506.605978mg
- Power Dissipation: 156W
- Drain-source On Resistance-Max: 0.0026Ohm
- Current - Continuous Drain (Id) @ 25°C: 23A Ta 100A Tc
- Rds On (Max) @ Id, Vgs: 2.6m Ω @ 50A, 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 40V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Number of Pins: 8
- Published: 2013
- Number of Terminations: 5
- Max Junction Temperature (Tj): 150°C
- Terminal Finish: Tin (Sn)
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Halogen Free: Halogen Free
- Factory Lead Time: 26 Weeks
- Max Dual Supply Voltage: 80V
- Continuous Drain Current (ID): 100A
- Case Connection: DRAIN
- JESD-30 Code: R-PDSO-F5
- Turn On Delay Time: 18 ns
- Series: OptiMOS?
- Drive Voltage (Max Rds On,Min Rds On): 6V 10V
- Turn-Off Delay Time: 47 ns
- Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
- Avalanche Energy Rating (Eas): 370 mJ
- Power Dissipation-Max: 2.5W Ta 156W Tc
- Vgs(th) (Max) @ Id: 3.8V @ 115μA
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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