2N7002LT1G
Unit Price: $0.120916
Total Price: $0.12
Qty
Unit Price
Ext Price
1
$0.120916
$0.12
10
$0.114072
$1.14
100
$0.107615
$10.76
500
$0.101524
$50.76
1000
$0.095777
$95.78
Not the price you want? Inquire for more quantity? Add this product to RFQ list, and we will response immediately.
- Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
- Factory Lead Time
10 Weeks
- Contact Plating
Tin
- Mounting Type
Surface Mount
- Surface Mount
YES
- Package / Case
TO-236-3, SC-59, SOT-23-3
- Number of Pins
3
- Transistor Element Material
SILICON
- Operating Temperature
-55°C~150°C TJ
- Published
2007
- Packaging
Cut Tape (CT)
- JESD-609 Code
e3
- Pbfree Code
yes
- Part Status
Active
- Moisture Sensitivity Level (MSL)
1 (Unlimited)
- Number of Terminations
3
- ECCN Code
EAR99
- Resistance
7.5Ohm
- Voltage - Rated DC
60V
- Terminal Position
DUAL
- Terminal Form
GULL WING
- Current Rating
115mA
- Pin Count
3
- Number of Elements
1
- Number of Channels
1
- Power Dissipation-Max
225mW Ta
- Element Configuration
Single
- Operating Mode
ENHANCEMENT MODE
- Power Dissipation
225mW
- Turn On Delay Time
20 ns
- FET Type
N-Channel
- Transistor Application
SWITCHING
- Rds On (Max) @ Id, Vgs
7.5 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id
2.5V @ 250μA
- Halogen Free
Halogen Free
- Input Capacitance (Ciss) (Max) @ Vds
50pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
115mA Tc
- Drive Voltage (Max Rds On,Min Rds On)
5V 10V
- Vgs (Max)
±20V
- Turn-Off Delay Time
40 ns
- Continuous Drain Current (ID)
115mA
- Threshold Voltage
1V
- Gate to Source Voltage (Vgs)
20V
- Drain to Source Breakdown Voltage
60V
- Max Junction Temperature (Tj)
150°C
- Nominal Vgs
2.5 V
- Feedback Cap-Max (Crss)
5 pF
- Height
1.11mm
- Length
3.04mm
- Width
1.4mm
- RoHS Status
ROHS3 Compliant
- Radiation Hardening
No
- REACH SVHC
No SVHC
- Lead Free
Lead Free
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It does not include any taxes, insurance, handling, duty (including but not limited to tariffs) or other similar charges, payment of which will be solely your responsibility. The actual freight varies according to specific situations. | |
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