TS5N214 is in the process of being discontinued
Consider one of these alternates:
open-in-new Compare alternates
Similar functionality to the compared device
NEW TMUX4827 ACTIVE +/-12-V beyond the supply, 2:1 (SPDT) 2-channel switch with 1.8-V compatible logic Replacement

Product details

Configuration 4:1 Number of channels 2 Power supply voltage - single (V) 5 Protocols Analog Ron (typ) (Ω) 3 CON (typ) (pF) 100 Supply current (typ) (µA) 10 Bandwidth (MHz) 25 Operating temperature range (°C) -40 to 85 Features Supports input voltage beyond supply Input/output continuous current (max) (mA) 100 Rating Catalog Drain supply voltage (max) (V) 5.25 Supply voltage (max) (V) 5.25
Configuration 4:1 Number of channels 2 Power supply voltage - single (V) 5 Protocols Analog Ron (typ) (Ω) 3 CON (typ) (pF) 100 Supply current (typ) (µA) 10 Bandwidth (MHz) 25 Operating temperature range (°C) -40 to 85 Features Supports input voltage beyond supply Input/output continuous current (max) (mA) 100 Rating Catalog Drain supply voltage (max) (V) 5.25 Supply voltage (max) (V) 5.25
SSOP (DBQ) 16 29.4 mm² 4.9 x 6 TSSOP (PW) 16 32 mm² 5 x 6.4
  • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 3 Typ)
  • 0- to 10-V Switching on Data I/O Ports
  • Bidirectional Data Flow With Near-Zero Propagation Delay
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 20 pF Max, B Port)
  • VCC Operating Range From 4.75 V to 5.25 V
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: PCI Interface, Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

  • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 3 Typ)
  • 0- to 10-V Switching on Data I/O Ports
  • Bidirectional Data Flow With Near-Zero Propagation Delay
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 20 pF Max, B Port)
  • VCC Operating Range From 4.75 V to 5.25 V
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: PCI Interface, Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

The TS5N214 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distorion on the data bus. Specifically designed to support high-bandwidth applications, the TS5N214 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The TS5N214 is a 2-bit 1-of-4 multiplexer/demultiplexer with separate output-enable (1OE, 2OE) inputs. The select (S0, S1) inputs control the data path of the multiplexer/demultiplexer. When OE is low, the multiplexer/demultiplexer is enabled and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the multiplexer/demultiplexer is disabled and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The TS5N214 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distorion on the data bus. Specifically designed to support high-bandwidth applications, the TS5N214 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The TS5N214 is a 2-bit 1-of-4 multiplexer/demultiplexer with separate output-enable (1OE, 2OE) inputs. The select (S0, S1) inputs control the data path of the multiplexer/demultiplexer. When OE is low, the multiplexer/demultiplexer is enabled and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the multiplexer/demultiplexer is disabled and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

Download View video with transcript Video

Technical documentation

star =Top documentation for this product selected by TI
No results found. Please clear your search and try again.
View all 5
Type Title Date
* Data sheet TS5N214 datasheet 28 Jul 2005
Application note Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 02 Jun 2022
Application note Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 01 Dec 2021
Application note Preventing Excess Power Consumption on Analog Switches 03 Jul 2008
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 Jul 2004

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Interface adapter

LEADED-ADAPTER1 — Surface mount to DIP header adapter for quick testing of TI's 5, 8, 10, 16 & 24-pin leaded packages

The EVM-LEADED1 board allows for quick testing and bread boarding of TI's common leaded packages.  The board has footprints to convert TI's D, DBQ, DCT,DCU, DDF, DGS, DGV, and PW surface mount packages to 100mil DIP headers.     

User guide: PDF
Not available on TI.com
Package Pins Download
SSOP (DBQ) 16 View options
TSSOP (PW) 16 View options

Ordering & quality

Information included:
  • RoHS
  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring
Information included:
  • Fab location
  • Assembly location

Support & training

TI E2E™ forums with technical support from TI engineers

Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.

If you have questions about quality, packaging or ordering TI products, see TI support. ​​​​​​​​​​​​​​

Videos