N-Channel MOSFET, 310 mA, 60 V, 3-Pin SOT-323 Nexperia 2N7002PW,115

RS Stock No.: 780-5348PBrand: NexperiaManufacturers Part No.: 2N7002PW,115
brand-logo
View all in MOSFETs

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

310 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

260 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

0.6 nC @ 2.5 V

Width

1.35mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Country of Origin

Malaysia

Product details

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

€ 0.144

Each (Supplied on a Reel) (Exc. Vat)

N-Channel MOSFET, 310 mA, 60 V, 3-Pin SOT-323 Nexperia 2N7002PW,115
Select packaging type

€ 0.144

Each (Supplied on a Reel) (Exc. Vat)

N-Channel MOSFET, 310 mA, 60 V, 3-Pin SOT-323 Nexperia 2N7002PW,115
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

QuantityUnit pricePer Reel
200 - 1400€ 0.144€ 28.72
1600+€ 0.096€ 19.15

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

310 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

260 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

0.6 nC @ 2.5 V

Width

1.35mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Country of Origin

Malaysia

Product details

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors