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Transistor: N-MOSFET; Trench; unipolar; 60V; 0.19A; Idm: 1.2A; 830mW

Manufacturer part number: 2N7002,215

TME Symbol: 2N7002.215

Specification

Manufacturer
NEXPERIA
Type of transistor
N-MOSFET
Technology
Trench
Polarisation
unipolar
Drain-source voltage
60V
Drain current
0.19A
Pulsed drain current
1.2A
Power dissipation
0.83W
Case
SOT23, TO236AB
Gate-source voltage
±30V
On-state resistance
Mounting
SMD
Kind of package
reel, tape
Kind of channel
enhanced
Gross weight0.015 g
Prepack informationReel = 3000 pcs
Certificates

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2N7002,215NEXPERIA

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