Manufacturer | Infineon (IRF) | |
Type of transistor | N-MOSFET | |
Technology | HEXFET® | |
Polarisation | unipolar | |
Drain-source voltage | 30V | |
Drain current | 18A | |
Power dissipation | 2.5W | |
Case | SO8 | |
Gate-source voltage | ±20V | |
On-state resistance | 4.8mΩ | |
Mounting | SMD | |
Gate charge | 17nC | |
Kind of channel | enhanced |
Under this option, you can: