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Due to the public holiday in Poland (29.03 — 01.04.2024) we inform about changes in the supply of goods.

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Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB

Manufacturer part number: IRF840PBF

TME Symbol: IRF840PBF

Specification

Manufacturer
VISHAY
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
500V
Drain current
5.1A
Pulsed drain current
32A
Power dissipation
125W
Case
TO220AB
Gate-source voltage
±20V
On-state resistance
0.85Ω
Mounting
THT
Gate charge
63nC
Kind of package
tube
Kind of channel
enhanced
Heatsink thickness
1.14...1.4mm
Gross weight1.95 g
Prepack informationTube = 50 pcsCardboard = 1000 pcs
Certificates
See other products in this category: THT N channel transistors VISHAY
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IRF840PBFVISHAY

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