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Due to the public holiday in Poland (29.03 — 01.04.2024) we inform about changes in the supply of goods.

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Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3

Manufacturer part number: FDN302P

TME Symbol: FDN302P

Specification

Manufacturer
ONSEMI
Type of transistor
P-MOSFET
Technology
PowerTrench®
Polarisation
unipolar
Drain-source voltage
-20V
Drain current
-2.4A
Power dissipation
0.5W
Case
SuperSOT-3
Gate-source voltage
±12V
On-state resistance
84mΩ
Mounting
SMD
Gate charge
14nC
Kind of package
reel, tape
Kind of channel
enhanced
Features of semiconductor devices
logic level
Gross weight0.02 g
Prepack informationReel = 3000 pcs
Certificates

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FDN302PONSEMI

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