Request Quote













Request Quote


PHT6NQ10T,135 | NEXPERIA

Download the free Library Loader to convert this file for your ECAD Tool.

Learn more about ECAD Model here.

NEXPERIA PHT6NQ10T,135

PHT6NQ10T Series 100 V 1.8 W 21 nC SMT N-Channel TrenchMOS Transistor - SOT-223


Ordering Info

In Stock: 8000 Delivery

MOQ: 4000

Package Quantity: 4000

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
4000-7999 $0.4214
8000+ $0.3933


Secure Payment Methods: Accepted Payment Methods:  Visa, Mastercard, American Express, Discovery Card PayPal accepted
Need more Info?

Electrical Characteristics

Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100
Drain Current-Max (ID) 3
Drain-source On Resistance-Max .09
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 26
Reference Standard IEC-134
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON