BSC123N08NS3GATMA1 specifications -Ameya360 electronic components purchase network


BSC123N08NS3GATMA1

ACTIVE EAR99
Product description : Single N-Channel 80 V 24 mOhm 25 nC OptiMOS™ Power Mosfet - TDSON-8
SPQ：1
Datasheet : --
ECAD Model:

Width:	6.35 mm
Rds On - Drain-Source Resistance:	12.3 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TDSON-8
Height:	1.1 mm
Vgs - Gate-Source Voltage:	+/- 20 V
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	12 ns
Forward Transconductance - Min:	44 S
Series:	BSC123N08
Factory Pack Quantity:	5000
Brand:	Infineon Technologies
Typical Turn-Off Delay Time:	19 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	80 V
Transistor Type:	1 N-Channel
ECCN	EAR99
Packaging:	Reel
Qg - Gate Charge:	19 nC
Pd - Power Dissipation:	66 W
Tradename:	OptiMOS
Vgs th - Gate-Source Threshold Voltage:	2.8 V
Configuration:	Single
Mounting Style:	SMD/SMT
Fall Time:	4 ns
Length:	6.35 mm
Manufacturer:	Infineon
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Part # Aliases:	BSC123N08NS3 BSC123N08NS3GXT G SP000443916
RoHS:	Details
Id - Continuous Drain Current:	55 A
Rise Time:	18 ns
Maximum Operating Temperature:	+ 150 C

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Stock code :	956170
Mfg name :	Infineon Technologies
MPN :	BSC123N08NS3GATMA1
Product description :	Single N-Channel 80 V 24 mOhm 25 nC OptiMOS™ Power Mosfet - TDSON-8

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